Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DMN100-7-F

DMN100-7-F

DMN100-7-F

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 240m Ω @ 1A, 10V ±20V 150pF @ 10V 5.5nC @ 10V TO-236-3, SC-59, SOT-23-3

SOT-23

DMN100-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 240MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.1A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 1.1A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 3 V
Height 1.3mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.25718 $0.77154
6,000 $0.24233 $1.45398
15,000 $0.22748 $3.4122
30,000 $0.21708 $6.5124
DMN100-7-F Product Details

DMN100-7-F Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMN100-7-F Features


a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 3V


DMN100-7-F Applications


There are a lot of Diodes Incorporated
DMN100-7-F applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News