DMN2065UW-7

new-10%

Manufacturer part number:DMN2065UW-7

Manufacturer:Diodes Incorporated

Description:MOSFET N CH 20V 2.8A SOT323

Case Package:SOT-23

Datasheet:DMN2065UW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	430mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	430mW
Turn On Delay Time	3.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	56m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.8A Ta
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 4.5V
Rise Time	9.7ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	7.2 ns
Turn-Off Delay Time	23.8 ns
Continuous Drain Current (ID)	2.8A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2.2A
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free