PSMN1R8-40YLC,115

new-10%

Manufacturer part number:PSMN1R8-40YLC,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PSMN1R8-40YLC,115 - MOSFET-Transistor, n-Kanal, 100 A, 40 V, 0.0015 ohm, 10 V, 1.45 V

Case Package:SOT-23

Datasheet:PSMN1R8-40YLC,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	272W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	272W
Case Connection	DRAIN
Turn On Delay Time	32.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6680pF @ 20V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	37ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	31.7 ns
Turn-Off Delay Time	62.5 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant