DMN3026LVT-7

new-10%

Manufacturer part number:DMN3026LVT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 6.6A 6-SOT26

Case Package:SOT-23

Datasheet:DMN3026LVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Capacitance	643pF
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	643pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.6A Ta
Gate Charge (Qg) (Max) @ Vgs	12.5nC @ 10V
Rise Time	2.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	12.1 ns
Continuous Drain Current (ID)	6.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.023Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant