APT58M50JCU2

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Manufacturer part number:APT58M50JCU2

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 500V 58A 4-Pin SOT-227

Case Package:SOT-23

Datasheet:APT58M50JCU2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 2 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	1997
Series	POWER MOS 8™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	543W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	60 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	10800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	340nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	155 ns
Continuous Drain Current (ID)	58A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	270A
DS Breakdown Voltage-Min	500V
Radiation Hardening	No
RoHS Status	RoHS Compliant