DMN33D8LDW-7

new-10%

Manufacturer part number:DMN33D8LDW-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 30V 0.25A

Case Package:SOT-23

Datasheet:DMN33D8LDW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	350mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	350mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	48pF @ 5V
Gate Charge (Qg) (Max) @ Vgs	1.23nC @ 10V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	250mA
Drain Current-Max (Abs) (ID)	0.25A
Drain-source On Resistance-Max	3Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant