DMN53D0U-7

new-10%

Manufacturer part number:DMN53D0U-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 50V 0.3A SOT23

Case Package:SOT-23

Datasheet:DMN53D0U-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	HIGH RELIABILITY
Capacitance	50pF
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	520mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	37.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Rise Time	2.8ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 5V
Vgs (Max)	±12V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.3A
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	50V
RoHS Status	ROHS3 Compliant