IPI65R150CFDXKSA1

new-10%

Manufacturer part number:IPI65R150CFDXKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 22.4A TO-262

Case Package:SOT-23

Datasheet:IPI65R150CFDXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	195.3W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	12.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C	22.4A Tc
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Rise Time	7.6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	5.6 ns
Turn-Off Delay Time	52.8 ns
Continuous Drain Current (ID)	22.4A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	700V
Pulsed Drain Current-Max (IDM)	72A
Avalanche Energy Rating (Eas)	614 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free