DMN5L06K-7

new-10%

Manufacturer part number:DMN5L06K-7

Manufacturer:Diodes Incorporated

Description:DMN5L06K-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DMN5L06K-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	50V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	300mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Drive Voltage (Max Rds On,Min Rds On)	1.8V 5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	300mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	5 pF
Height	1.1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free