DMN61D8LVT-13

new-10%

Manufacturer part number:DMN61D8LVT-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 0.63A TSOT26

Case Package:SOT-23

Datasheet:DMN61D8LVT-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	820mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	820mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8 Ω @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	12.9pF @ 12V
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 5V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	630mA
Drain Current-Max (Abs) (ID)	0.63A
Drain-source On Resistance-Max	2.4Ohm
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant