DMN63D8LW-13

new-10%

Manufacturer part number:DMN63D8LW-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 0.38A SOT323

Case Package:SOT-23

Datasheet:DMN63D8LW-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	2.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	23.2pF @ 25V
Current - Continuous Drain (Id) @ 25°C	380mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	11.4 ns
Continuous Drain Current (ID)	380mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.38A
Drain-source On Resistance-Max	4.5Ohm
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant