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STP19NF20

STP19NF20

STP19NF20

STMicroelectronics

N-Channel Tube 160m Ω @ 7.5A, 10V ±20V 800pF @ 25V 24nC @ 10V TO-220-3

SOT-23

STP19NF20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series MESH OVERLAY™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 160mOhm
Terminal Finish Tin (Sn)
Base Part Number STP19N
Pin Count3
Number of Elements 1
Power Dissipation-Max 90W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation90W
Turn On Delay Time11.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 60A
Height 9.15mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5183 items

Pricing & Ordering

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STP19NF20 Product Details

STP19NF20 Description


Using STMicroelectronics' consolidated strip-layout-based MESH OVERLAYTM technology, STP19NF20 Power MOSFETs are created. The end result is a product whose performance is on par with or better than that of similar standard parts made by other manufacturers.



STP19NF20 Features


  • Gate charge minimized

  • Very low intrinsic capacitance

  • Extremely high dv/dt capability



STP19NF20 Applications


  • Switching applications


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