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DMNH6021SPDQ-13

DMNH6021SPDQ-13

DMNH6021SPDQ-13

Diodes Incorporated

MOSFET 2NCH 60V 8.2A POWERDI

SOT-23

DMNH6021SPDQ-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1143pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.2A 32A
Gate Charge (Qg) (Max) @ Vgs 20.1nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 32A
Drain-source On Resistance-Max 0.025Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 64 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.60465 $1.2093
5,000 $0.57789 $2.88945
12,500 $0.55878 $6.70536

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