DMP10H4D2S-7

new-10%

Manufacturer part number:DMP10H4D2S-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 100V 0.27A SOT23

Case Package:SOT-23

Datasheet:DMP10H4D2S-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	380mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	380mW
Turn On Delay Time	3.3 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 25V
Current - Continuous Drain (Id) @ 25°C	270mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	8.4 ns
Continuous Drain Current (ID)	-270mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.27A
Drain to Source Breakdown Voltage	-100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant