DMP2008UFG-7

new-10%

Manufacturer part number:DMP2008UFG-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 20V 14A POWERDI

Case Package:SOT-23

Datasheet:DMP2008UFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Weight	72.007789mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta 41W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6909pF @ 10V
Current - Continuous Drain (Id) @ 25°C	14A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 4.5V
Rise Time	33ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	124 ns
Turn-Off Delay Time	291 ns
Continuous Drain Current (ID)	54A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Height	850μm
Length	3.35mm
Width	3.35mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free