NDPL100N10BG

new-10%

Manufacturer part number:NDPL100N10BG

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 100V 100A 3-Pin TO-220 Tube

Case Package:SOT-23

Datasheet:NDPL100N10BG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 110W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.2m Ω @ 50A, 15V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	385ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V 15V
Vgs (Max)	±20V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0087Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	147 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free