DMP3035LSS-13

new-10%

Manufacturer part number:DMP3035LSS-13

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 30V 12A 8-SOIC

Case Package:SOT-23

Datasheet:DMP3035LSS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	850.995985mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2W Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5.1 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1655pF @ 20V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	30.7nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 20V
Vgs (Max)	±25V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	40A
Height	1.5mm
Length	5.3mm
Width	4.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free