DMP58D0LFB-7

new-10%

Manufacturer part number:DMP58D0LFB-7

Manufacturer:Diodes Incorporated

Description:Trans MOSFET P-CH 50V 0.31A Automotive 3-Pin DFN T/R

Case Package:SOT-23

Datasheet:DMP58D0LFB-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-UFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	470mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.22W
Case Connection	DRAIN
Turn On Delay Time	30.7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	27pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180mA Ta
Rise Time	84.1ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 5V
Vgs (Max)	±20V
Fall Time (Typ)	32.2 ns
Turn-Off Delay Time	201.8 ns
Continuous Drain Current (ID)	310mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-50V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant