SPU07N60S5

new-10%

Manufacturer part number:SPU07N60S5

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 600V 7.3A TO-251

Case Package:SOT-23

Datasheet:SPU07N60S5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	7.3A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Turn On Delay Time	120 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds	970pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	170 ns
Continuous Drain Current (ID)	7.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	14.6A
RoHS Status	RoHS Compliant
Lead Free	Lead Free