DMS3012SFG-13

new-10%

Manufacturer part number:DMS3012SFG-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 12A POWERDI

Case Package:SOT-23

Datasheet:DMS3012SFG-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Weight	72.007789mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	14.7nC @ 10V
Rise Time	27.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13.6 ns
Turn-Off Delay Time	29.7 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.5A
Drain-source On Resistance-Max	0.01Ohm
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Body)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant