APTM100DA33T1G

new-10%

Manufacturer part number:APTM100DA33T1G

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1KV 23A 12-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTM100DA33T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	390W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390W
Case Connection	ISOLATED
Turn On Delay Time	44 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	396m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	7868pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	305nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.39Ohm
Radiation Hardening	No
RoHS Status	RoHS Compliant