DMS3014SFG-7

new-10%

Manufacturer part number:DMS3014SFG-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 9.5A POWERDI

Case Package:SOT-23

Datasheet:DMS3014SFG-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Weight	72.007789mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 10.4A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9.5A Ta
Gate Charge (Qg) (Max) @ Vgs	45.7nC @ 10V
Rise Time	24.4ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6.6 ns
Turn-Off Delay Time	33.1 ns
Continuous Drain Current (ID)	9.5A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Body)
Height	850μm
Length	3.35mm
Width	3.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free