APTM50DAM19G

new-10%

Manufacturer part number:APTM50DAM19G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 163A SP6

Case Package:SOT-23

Datasheet:APTM50DAM19G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1136W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22.5m Ω @ 81.5A, 10V
Vgs(th) (Max) @ Id	5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	22400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	163A Tc
Gate Charge (Qg) (Max) @ Vgs	492nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	87 ns
Continuous Drain Current (ID)	163A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.0225Ohm
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant