DMTH6010LPDQ-13

new-10%

Manufacturer part number:DMTH6010LPDQ-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2NCH 60V 13.1A POWERDI

Case Package:SOT-23

Datasheet:DMTH6010LPDQ-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	2.8W
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2615pF @ 30V
Current - Continuous Drain (Id) @ 25°C	13.1A Ta 47.6A Tc
Gate Charge (Qg) (Max) @ Vgs	40.2nC @ 10V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	47.6A
Drain Current-Max (Abs) (ID)	13.1A
Drain-source On Resistance-Max	0.016Ohm
Pulsed Drain Current-Max (IDM)	90A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	20 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant