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BSM400D12P2G003

  • BSM400D12P2G003
  • BSM400D12P2G003

BSM400D12P2G003

BSM400D12P2G003

ROHM Semiconductor

SILICON CARBIDE POWER MODULE. B

SOT-23

BSM400D12P2G003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Package / Case Module
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 2450W Tc
FET Type 2 N-Channel (Half Bridge)
Vgs(th) (Max) @ Id 4V @ 85mA
Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 400A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
FET Feature Silicon Carbide (SiC)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4,745.090570 $4
10 $4,589.062448 $40
25 $4,557.162311 $100
50 $4,525.483924 $200
100 $4,432.403451 $400
500 $4,115.509240 $2000

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