DNLS160-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 270MHz.Breakdown input voltage is 60V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DNLS160-7 Features
the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 270MHz
DNLS160-7 Applications
There are a lot of Diodes Incorporated DNLS160-7 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
