BD678G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 30mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 200MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD678G Features

the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz

BD678G Applications

There are a lot of ON Semiconductor BD678G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting