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DSM80100M-7

DSM80100M-7

DSM80100M-7

Diodes Incorporated

DSM80100M-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSM80100M-7 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 600mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 1
Polarity PNP
Element Configuration Dual
Power - Max 600mW
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -4V
Continuous Collector Current -500mA
Height 1.1mm
Length 3mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.186622 $1.186622
10 $1.119455 $11.19455
100 $1.056089 $105.6089
500 $0.996311 $498.1555
1000 $0.939916 $939.916
DSM80100M-7 Product Details

DSM80100M-7 Overview


This device has a DC current gain of 120 @ 10mA 1V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at -500mA to achieve high efficiency.Emitter base voltages of -4V can achieve high levels of efficiency.As a result, it can handle voltages as low as 80V volts.When collector current reaches its maximum, it can reach 500mA volts.

DSM80100M-7 Features


the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V

DSM80100M-7 Applications


There are a lot of Diodes Incorporated DSM80100M-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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