DSM80100M-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSM80100M-7 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
21 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
600mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G6
Number of Elements
1
Polarity
PNP
Element Configuration
Dual
Power - Max
600mW
Transistor Type
PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 10mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-4V
Continuous Collector Current
-500mA
Height
1.1mm
Length
3mm
Width
1.6mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.186622
$1.186622
10
$1.119455
$11.19455
100
$1.056089
$105.6089
500
$0.996311
$498.1555
1000
$0.939916
$939.916
DSM80100M-7 Product Details
DSM80100M-7 Overview
This device has a DC current gain of 120 @ 10mA 1V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at -500mA to achieve high efficiency.Emitter base voltages of -4V can achieve high levels of efficiency.As a result, it can handle voltages as low as 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
DSM80100M-7 Features
the DC current gain for this device is 120 @ 10mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at -4V
DSM80100M-7 Applications
There are a lot of Diodes Incorporated DSM80100M-7 applications of single BJT transistors.