DSM80101M-7 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.A constant collector voltage of 500mA is necessary for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor can take a breakdown input voltage of 80V volts.Maximum collector currents can be below 500mA volts.

DSM80101M-7 Features

the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V

DSM80101M-7 Applications

There are a lot of Diodes Incorporated DSM80101M-7 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter