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2SC4132T100R

2SC4132T100R

2SC4132T100R

ROHM Semiconductor

2SC4132T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SC4132T100R Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Current Rating1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4132
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Gain Bandwidth Product80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Collector Emitter Breakdown Voltage120V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage2V
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
Continuous Collector Current 2A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3696 items

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2SC4132T100R Product Details

2SC4132T100R Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 5V DC current gain.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).A transition frequency of 80MHz is present in the part.The breakdown input voltage is 120V volts.Collector current can be as low as 2A volts at its maximum.

2SC4132T100R Features


the DC current gain for this device is 180 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz

2SC4132T100R Applications


There are a lot of ROHM Semiconductor 2SC4132T100R applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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