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2SC4132T100R

2SC4132T100R

2SC4132T100R

ROHM Semiconductor

2SC4132T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SC4132T100R Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
Subcategory Other Transistors
Voltage - Rated DC 120V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC4132
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 100mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
Continuous Collector Current 2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2SC4132T100R Product Details

2SC4132T100R Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 100mA 5V DC current gain.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.5A).A transition frequency of 80MHz is present in the part.The breakdown input voltage is 120V volts.Collector current can be as low as 2A volts at its maximum.

2SC4132T100R Features


the DC current gain for this device is 180 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz

2SC4132T100R Applications


There are a lot of ROHM Semiconductor 2SC4132T100R applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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