DSS2540M-7B Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 50mA, 500mA.For high efficiency, the continuous collector voltage must be kept at 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can take a breakdown input voltage of 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
DSS2540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DSS2540M-7B Applications
There are a lot of Diodes Incorporated DSS2540M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
