NSV40300MZ4T1G Overview
In this device, the DC current gain is 175 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 300mA, 3A.During maximum operation, collector current can be as low as 3A volts.
NSV40300MZ4T1G Features
the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
NSV40300MZ4T1G Applications
There are a lot of ON Semiconductor NSV40300MZ4T1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
