DSS8110Y-7 Overview

This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 1A volts.

DSS8110Y-7 Features

the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

DSS8110Y-7 Applications

There are a lot of Diodes Incorporated DSS8110Y-7 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver