DSS8110Y-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS8110Y-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Continuous Collector Current
1A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.690187
$0.690187
10
$0.651120
$6.5112
100
$0.614264
$61.4264
500
$0.579494
$289.747
1000
$0.546693
$546.693
DSS8110Y-7 Product Details
DSS8110Y-7 Overview
This device has a DC current gain of 100 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 1A volts.
DSS8110Y-7 Features
the DC current gain for this device is 100 @ 500mA 10V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 200mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 100MHz
DSS8110Y-7 Applications
There are a lot of Diodes Incorporated DSS8110Y-7 applications of single BJT transistors.