ZXTP2013GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -240mV allows maximum design flexibility.A VCE saturation (Max) of 340mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Maintaining the continuous collector voltage at -5A is essential for high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5A.As a result, the part has a transition frequency of 125MHz.The breakdown input voltage is 100V volts.Maximum collector currents can be below 5A volts.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated ZXTP2013GTA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
