DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTN07100BP5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Weight
95.991485mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.2W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
175MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.2W
Power - Max
740mW
Transistor Application
SWITCHING
Gain Bandwidth Product
175MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-252
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
175MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$39.836160
$39.83616
10
$37.581283
$375.81283
100
$35.454041
$3545.4041
500
$33.447208
$16723.604
1000
$31.553970
$31553.97
DXTN07100BP5-13 Product Details
DXTN07100BP5-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 7V, an efficient operation can be achieved.175MHz is present in the transition frequency.The breakdown input voltage is 100V volts.When collector current reaches its maximum, it can reach 2A volts.
DXTN07100BP5-13 Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 7V a transition frequency of 175MHz
DXTN07100BP5-13 Applications
There are a lot of Diodes Incorporated DXTN07100BP5-13 applications of single BJT transistors.