Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DXTN07100BP5-13

DXTN07100BP5-13

DXTN07100BP5-13

Diodes Incorporated

DXTN07100BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTN07100BP5-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 3
Weight 95.991485mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3.2W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Power - Max 740mW
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
JEDEC-95 Code TO-252
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $39.836160 $39.83616
10 $37.581283 $375.81283
100 $35.454041 $3545.4041
500 $33.447208 $16723.604
1000 $31.553970 $31553.97
DXTN07100BP5-13 Product Details

DXTN07100BP5-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 7V, an efficient operation can be achieved.175MHz is present in the transition frequency.The breakdown input voltage is 100V volts.When collector current reaches its maximum, it can reach 2A volts.

DXTN07100BP5-13 Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz

DXTN07100BP5-13 Applications


There are a lot of Diodes Incorporated DXTN07100BP5-13 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News