2N5400RA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5400RA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
400MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.04000
$0.04
500
$0.0396
$19.8
1000
$0.0392
$39.2
1500
$0.0388
$58.2
2000
$0.0384
$76.8
2500
$0.038
$95
2N5400RA Product Details
2N5400RA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.This product comes in a TO-92-3 device package from the supplier.Detection of Collector Emitter Breakdown at 120V maximal voltage is present.
2N5400RA Features
the DC current gain for this device is 40 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA the supplier device package of TO-92-3
2N5400RA Applications
There are a lot of Rochester Electronics, LLC 2N5400RA applications of single BJT transistors.