DZT853-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DZT853-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DZT853
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
340mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
340mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Continuous Collector Current
6A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.501592
$0.501592
10
$0.473200
$4.732
100
$0.446415
$44.6415
500
$0.421146
$210.573
1000
$0.397308
$397.308
DZT853-13 Product Details
DZT853-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.The collector emitter saturation voltage is 340mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 500mA, 5A.Continuous collector voltage should be kept at 6A for high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 130MHz.This device can take an input voltage of 100V volts before it breaks down.When collector current reaches its maximum, it can reach 6A volts.
DZT853-13 Features
the DC current gain for this device is 100 @ 2A 2V a collector emitter saturation voltage of 340mV the vce saturation(Max) is 340mV @ 500mA, 5A the emitter base voltage is kept at 6V a transition frequency of 130MHz
DZT853-13 Applications
There are a lot of Diodes Incorporated DZT853-13 applications of single BJT transistors.