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DZT853-13

DZT853-13

DZT853-13

Diodes Incorporated

DZT853-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DZT853-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DZT853
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 340mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 340mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 6A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.501592 $0.501592
10 $0.473200 $4.732
100 $0.446415 $44.6415
500 $0.421146 $210.573
1000 $0.397308 $397.308
DZT853-13 Product Details

DZT853-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.The collector emitter saturation voltage is 340mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 500mA, 5A.Continuous collector voltage should be kept at 6A for high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 130MHz.This device can take an input voltage of 100V volts before it breaks down.When collector current reaches its maximum, it can reach 6A volts.

DZT853-13 Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

DZT853-13 Applications


There are a lot of Diodes Incorporated DZT853-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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