MJD253-001 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.A collector emitter saturation voltage of 600mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.As you can see, the part has a transition frequency of 40MHz.Maximum collector currents can be below 4A volts.

MJD253-001 Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 40MHz

MJD253-001 Applications

There are a lot of ON Semiconductor MJD253-001 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting