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FCX593TA

FCX593TA

FCX593TA

Diodes Incorporated

FCX593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FCX593TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -100V
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FCX593
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1A
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.037929 $0.037929
500 $0.027889 $13.9445
1000 $0.023240 $23.24
2000 $0.021321 $42.642
5000 $0.019926 $99.63
10000 $0.018537 $185.37
15000 $0.017927 $268.905
50000 $0.017627 $881.35
FCX593TA Product Details

FCX593TA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 5V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.A transition frequency of 50MHz is present in the part.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts is possible.

FCX593TA Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz

FCX593TA Applications


There are a lot of Diodes Incorporated FCX593TA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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