FCX593TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FCX593TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-100V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FCX593
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037929
$0.037929
500
$0.027889
$13.9445
1000
$0.023240
$23.24
2000
$0.021321
$42.642
5000
$0.019926
$99.63
10000
$0.018537
$185.37
15000
$0.017927
$268.905
50000
$0.017627
$881.35
FCX593TA Product Details
FCX593TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 5V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.A transition frequency of 50MHz is present in the part.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts is possible.
FCX593TA Features
the DC current gain for this device is 100 @ 500mA 5V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 25mA, 250mA the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 50MHz
FCX593TA Applications
There are a lot of Diodes Incorporated FCX593TA applications of single BJT transistors.