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MJE350G

  • MJE350G
  • MJE350G

MJE350G

MJE350G

ON Semiconductor

MJE350G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE350G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE350
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Collector Emitter Breakdown Voltage 300V
Collector Base Voltage (VCBO) 3V
Emitter Base Voltage (VEBO) 3V
hFE Min 30
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.61000 $0.61
10 $0.54600 $5.46
100 $0.42180 $42.18
500 $0.33638 $168.19
MJE350G Product Details

MJE350G Overview


In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MJE350G Features


the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA

MJE350G Applications


There are a lot of ON Semiconductor MJE350G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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