FMMT495TA Overview

In this device, the DC current gain is 10 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.When VCE saturation is 300mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.There is a transition frequency of 100MHz in the part.There is a breakdown input voltage of 150V volts that it can take.Collector current can be as low as 1A volts at its maximum.

FMMT495TA Features

the DC current gain for this device is 10 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 100MHz

FMMT495TA Applications

There are a lot of Diodes Incorporated FMMT495TA applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter