FMMT555TA Overview
In this device, the DC current gain is 50 @ 300mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.The part has a transition frequency of 100MHz.The breakdown input voltage is 150V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT555TA Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT555TA Applications
There are a lot of Diodes Incorporated FMMT555TA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
