2SB1205S-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 500mA 2V.A collector emitter saturation voltage of -250mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 60mA, 3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Collector current can be as low as 5A volts at its maximum.
2SB1205S-TL-E Features
the DC current gain for this device is 140 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at -5V
2SB1205S-TL-E Applications
There are a lot of ON Semiconductor 2SB1205S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
