FMMTA13TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.A collector emitter saturation voltage of 900mV allows maximum design flexibility.When VCE saturation is 900mV @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A 300mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
FMMTA13TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 100MHz
FMMTA13TA Applications
There are a lot of Diodes Incorporated FMMTA13TA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
