FMMTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMTA14TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
300mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMTA14
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
330mW
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
900mV @ 100μA, 100mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
900mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Continuous Collector Current
300mA
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.12561
$0.37683
6,000
$0.11879
$0.71274
15,000
$0.11196
$1.6794
30,000
$0.10400
$3.12
FMMTA14TA Product Details
FMMTA14TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 900mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 900mV @ 100μA, 100mA.Continuous collector voltages should be kept at 300mA to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).Parts of this part have transition frequencies of 100MHz.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 300mA volts.
FMMTA14TA Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 900mV the vce saturation(Max) is 900mV @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 300mA a transition frequency of 100MHz
FMMTA14TA Applications
There are a lot of Diodes Incorporated FMMTA14TA applications of single BJT transistors.