2SB1308T100P Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 82 @ 500mA 2V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 150mA, 1.5A.Emitter base voltages of 6V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

2SB1308T100P Features

the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -3A

2SB1308T100P Applications

There are a lot of ROHM Semiconductor 2SB1308T100P applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter