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FMMTA56TA

FMMTA56TA

FMMTA56TA

Diodes Incorporated

FMMTA56TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMTA56TA Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC -80V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMTA56
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -4V
hFE Min 50
Continuous Collector Current -500mA
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.276840 $0.27684
10 $0.261170 $2.6117
100 $0.246387 $24.6387
500 $0.232440 $116.22
1000 $0.219283 $219.283
FMMTA56TA Product Details

FMMTA56TA Overview


This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.With the emitter base voltage set at -4V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.100MHz is present in the transition frequency.This device can take an input voltage of 80V volts before it breaks down.The maximum collector current is 500mA volts.

FMMTA56TA Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 100MHz

FMMTA56TA Applications


There are a lot of Diodes Incorporated FMMTA56TA applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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