FMMTA56TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMTA56TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Voltage - Rated DC
-80V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMTA56
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
330mW
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
-4V
hFE Min
50
Continuous Collector Current
-500mA
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.276840
$0.27684
10
$0.261170
$2.6117
100
$0.246387
$24.6387
500
$0.232440
$116.22
1000
$0.219283
$219.283
FMMTA56TA Product Details
FMMTA56TA Overview
This device has a DC current gain of 50 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.With the emitter base voltage set at -4V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.100MHz is present in the transition frequency.This device can take an input voltage of 80V volts before it breaks down.The maximum collector current is 500mA volts.
FMMTA56TA Features
the DC current gain for this device is 50 @ 100mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at -4V the current rating of this device is -500mA a transition frequency of 100MHz
FMMTA56TA Applications
There are a lot of Diodes Incorporated FMMTA56TA applications of single BJT transistors.