DSA900100L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSA900100L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-89, SOT-490
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Max Power Dissipation
125mW
Terminal Position
DUAL
Terminal Form
FLAT
Base Part Number
DSA9001
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
150MHz
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
-7V
hFE Min
210
Height
600μm
Length
1.6mm
Width
850μm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.202787
$0.202787
10
$0.191309
$1.91309
100
$0.180480
$18.048
500
$0.170264
$85.132
1000
$0.160627
$160.627
DSA900100L Product Details
DSA900100L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.The emitter base voltage can be kept at -7V for high efficiency.There is a transition frequency of 150MHz in the part.The breakdown input voltage is 50V volts.The maximum collector current is 100mA volts.
DSA900100L Features
the DC current gain for this device is 210 @ 2mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 10mA, 100mA the emitter base voltage is kept at -7V a transition frequency of 150MHz
DSA900100L Applications
There are a lot of Panasonic Electronic Components DSA900100L applications of single BJT transistors.