MMBTA14-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA14-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2005
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBTA14
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
300mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBTA14-7 Product Details
MMBTA14-7 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.The part has a transition frequency of 125MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 300mA volts can be achieved.
MMBTA14-7 Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 100mA a transition frequency of 125MHz
MMBTA14-7 Applications
There are a lot of Diodes Incorporated MMBTA14-7 applications of single BJT transistors.