ZTX694BSTOB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX694BSTOB Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.29.00.75
Voltage - Rated DC
120V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX694B
Pin Count
3
JESD-30 Code
R-PSIP-W3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 400mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
500mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX694BSTOB Product Details
ZTX694BSTOB Overview
In this device, the DC current gain is 400 @ 200mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 400mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 130MHz in the part.The maximum collector current is 500mA volts.
ZTX694BSTOB Features
the DC current gain for this device is 400 @ 200mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 400mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 130MHz
ZTX694BSTOB Applications
There are a lot of Diodes Incorporated ZTX694BSTOB applications of single BJT transistors.